Sol-gel production of indium oxide thin films with stannum addition on glass substrates

Sol-gel method from a film-forming solution based on In (NO ₃ ) ₃ & middot; 4H ₂ O, SnCl ₂ & middot; 2H ₂ O and acetylacetone, thin-film In2O3-Sn materials on glass substrates are obtained, characterized by a transparency of 65 - 83% in the wavelength range of 450 - 800 nm. The composition of the film-forming solution (solvated oligomers -In (Hacac) _n -O-In (Hacac) _n -O-Sn (Hacac) ) _m -O-In (Hacac) _n -O-) and the processes of its formation. Thermal analysis was used to establish the temperature regime of the synthesis of In ₂ O ₃ - Sn films and it was shown that tin (IV) predominates in the oxide phase, which is formed after thermal destruction of a complex tin particle ( II) with acetylacetone and oxidation of SnO to SnO ₂ .